型号:

BUZ31 E3046

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 200V 14.5A TO-220
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
BUZ31 E3046 PDF
标准包装 500
系列 SIPMOS®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 200V
电流 - 连续漏极(Id) @ 25° C 14.5A
开态Rds(最大)@ Id, Vgs @ 25° C 200 毫欧 @ 9A,5V
Id 时的 Vgs(th)(最大) 4V @ 1mA
闸电荷(Qg) @ Vgs -
输入电容 (Ciss) @ Vds 1120pF @ 25V
功率 - 最大 95W
安装类型 通孔
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 PG-TO263-3
包装 带卷 (TR)
其它名称 BUZ31E3046X
BUZ31E3046XK
SP000011344
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